j..iiu <^.mi- cs ij , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2N6835 description ? collector-emitter sustaining voltage- :vceo(sus)=450v(min) ? high switching speed applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: ? switching regulators ? inverters ? motor controls ? deflection circuits absolute maximum ratings(ta=25c) thermal characteristics pin 1.base 2. emitter 3. collect or (cas e) to-3 package symbol vcev vceo(sus) vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation@tc=25'c junction temperature storage temperature value 850 450 6 8 16 6 12 150 200 -65-200 unit v v v a a a a w ?c 'c symbol r(h j-c parameter thermal resistance.junction to case max 1.17 unit ?c/w -?ju? d 2pl ! dm a b c d e q h k l n q u v intn mm max 3900 2s.30 790 090 140 26.67 8.30 1.10 1.60 to.92 546 11 40 1675 19.40 4.00 30.00 4.30 13.50 170s 1962 4.20 3020 450 n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2N6835 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-! vce(sat)-2 vbe(sat) icev icer iebo hpe-1 hfe-2 fi cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current gain-bandwidth product output capacitance conditions lc=100ma;lb=0 lc= 3a; ib= 0.4a lc= 5a; ib= 0.66a lc=5a;lb=0.66a,tc=10(rc lc= 5a; ib= 0.66a ic=5a;ib=0.66a,tc=100'c vcev=850v;vbe(o(o=1.5v vcev= 850v;vbe(off)= 1.5v;tc=100'c vce= 850v; rbe= 50 q ,tc= 100'c ve6= 6.0v; lc=0 lc= 5a ; vce= 5v lc= 8a ; vce= 5v lc= 0.25a ;vce= 10v; ftest=10mhz le=0;vcb=10v;f,est=1.0khz min 450 7.5 4 10 50 typ. max 1.2 2.5 3.0 1.5 1.5 0.25 1.5 2.5 1.0 30 75 350 unit v v v v ma ma ma mhz pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc= 5a , vcc= 250v; lei=0.66a; ib2=-1.3a; pw= 30 u s; rs2= 4 q duty cycle=2.0% 20 85 1000 70 50 250 2500 250 ns ns ns ns
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